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Diode laser systems and laser-optic systems are playing a key role in the modern semiconductor manufacturing processes, for instance, in wafer annealing.
Laser Annealing (LA) is one of the key technologies in the fabrication of 28nm and below logic chips. The process uses a near-infrared band semiconductor laser source, a number of different functions of laser optical shaping system and optical homogenization system to achieve an extremely narrow (12 mm * 70 µm) line laser spot with > 95% uniformity in length direction. In less than one millisecond, the surface atoms of the wafer are heated to > 1000°C and then rapidly cooled down to form ultra-shallow junctions and highly activated junctions on the wafer surface – the yield of the wafer production is then improved.
With our core technologies combined, Focuslight's DLight S series semiconductor wafer annealing system is applicable in the front end process of semiconductor.
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