Focuslight Technologies Announces DLight®S series Diode Laser System

With the development of semiconductor manufacturing technology and the improvement of VLSI design and manufacturing capacity, laser annealing technology has gradually replaced the traditional furnace annealing technology and become the mainstream technology in the field of semiconductor manufacturing. Compared with traditional annealing, laser annealing has lots of advantages, like selective heating, closed-loop temperature control, high power density and stable energy output. It suitable for various annealing processes.

Applications

Laser annealing is one of the indispensable key processes in the manufacturing of logic chip manufacturing with 28nm technology node and below. Such process heats the wafer surface atomic layer to more than 1000 ° C in less than 1 millisecond, and then cools rapidly, to effectively reduce wafer electrode defects in the process, and to improve product performance and production yield.

Product

Focuslight Technologies has launched DLight®S series Diode Laser System for laser wafer annealing. This system combines eutectic bonding technology, thermal management and thermal stress control technology for photon generation and beam transformation and beam homogenization technology for photon control. DLight®S generates 70 μm, extremely narrow line laser beam with an aspect ratio of 160:1.Such laser system provides continuous energy output up to 1800W / mm2, which can achieve ＞ 95% beam uniformity and ＞ 98% output power stability . At the same time, it also has additional functions such as processing temperature monitoring and in-situ detection of output beam quality.

Typical product testing data

DLight®S series Diode Laser System

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